Specialized manufacturer of Digital Pressure Meters and Load Cells

VALCOM CO.,LTD.

(Semiconductor diapharagm type & Thin film type) Pressure Sensor Device/Element
OEM Element
0–700kPa
0–700kPa abs

OEM Element
*OEM products to be made to order.
Minimum order lot: 30 units

Semiconductor Diaphragm type Pressure Sensor Device / Element

  • Can be designed and made to meet customers' requirements.
  • Can be designed and made of Hastelloy C-22 equivalent or SUS316L.
  • High accuracy: 0.2%R.C.
  • High withstanding pressure: 300%
Measured medium Water, oil, gases or other media that will not corrode SUS316L and Hastelloy C-22 equivalent.
Pressure Type Positive, compound, negative and absolute pressures can be measured.
Measured Range 0–700kPa or 0–700kPa abs

Element basics specifications

Non Linearity ±0.2%R.C.
Applied Current;Maximum 1mA
Output Voltage (Offset) ±2mV/mA
Output Voltage (Span) 85±30mV/mA
Input Terminal Resistance 4±1.5kΩ (at 25°C)
Insulation Resistance 100MΩ or more (DC50V)
Safe Overload Rating 300%R.C.
Compensated Temperature Range
(Temperature of medium to be measured)
0–70°C (No condensation or freezing)
Safe Temperature Range
(Temperature of medium to be measured)
0–100°C (No condensation or freezing)
Temperature Characteristic (Offset) ±1%R.C./0–70°C (25°C standard)
Temperature Characteristic (Span) ±1%R.C./0–70°C (25°C standard)
Pressure Port Material Hastelloy C22+SUS316L
Type Elements and R1/4, 3/8, G1/4, 3/8, VCR and Swagelok

Model Selection

Check Specifications
Model Rated pressure Greatest pressure
  ESG050E 50kPa 150kPa
  ESG100E 100kPa 300kPa
  ESG200E 200kPa 600kPa
  ESG500E 500kPa 1500kPa
  ESG700E 700kPa 1400kPa
  ESA050E 50kPa abs 150kPa abs
  ESA100E 100kPa abs 300kPa abs
  ESA200E 200kPa abs 600kPa abs
  ESA500E 500kPa abs 1500kPa abs
  ESA700E 700kPa abs 1400kPa abs

Semiconductor Diaphragm type Pressure Sensor Device / Element

Semiconductor Diaphragm type Pressure Sensor Device / Element

OEM production of semiconductor sensor devices and sensor elements

VALCOM also supplies OEM sensor devices and sensor elements.
Semiconductor silicon chips can be made with thicker diaphragm, compared with metal chips, which improves pressure resistance of pressure sensors. In case of sensor elements, double diaphragm system is adopted that receives pressure via highly corrosive-resistant metal diaphragm made of Hastelloy C-22 equivalent or SUS316L.

  • Sensor elements capable of measuring positive, negative, compound and absolute pressures can be manufactured.
  • Pressure port that is directly in contact with the media to be measured can be made of Hasteloy C-22 equivalent or SUS316L, which offers good corrosion resistance.
  • Excellent pressure resistance performance thanks to thick diaphragm of silicon chip for detecting pressure.
Element photograph
Element photograph
Element example
Element example

Element shape

External dimensions

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